Surface morphology of nitrided thin thermal SiO_2 studied by atomic force microscopy

摘要

In this work the surface morphology of nitrided silicon dioxide is extensively studied using atomic force microscopy. Nitridation is obtained by thermal annealing in nitriding atmosphere in conventional furnace, immediately after thermal oxidation of silicon substrates. The characterisation performed concerns the oxide surface, as well as the region where nitrogen is incorporated, the latter exposed using a diluted HF solution. Significant differences in the morphology of the nitrided layer are observed, which are a function of the nitridation process applied. They allow us to correlate the morphology to the nitrogen incorporation mechanisms that have occurred.