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Synthesis and Properties of Electrochemically Deposited Vertical Mesoporous Silica Thin Films

机译:电化学沉积垂直介孔二氧化硅薄膜的合成与性能

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Electrochemical deposition was successfully used to prepare mesoporous silica thin films with highly ordered and vertically oriented pores. Tetraethyl orthosilicate was used as the inorganic silicon source and cetyltrimethyl ammonium bromide was the template. A negative potential was applied to the working electrode, which was initially immersed in collosol and then in hydroxyl at the electrode/solution interface. Hydroxyl ion served as the catalyst that promoted the polycondensation and self-assembly of the silicon precursor, as well as the formation of thin films with pores which are highly ordered and vertically oriented with respect to the panel. The pore arrangement of the mesoporous film was hexagonal, and its aperture was 2 nm to 3 nm. The verticality of the thin film pore was demonstrated through permeability and transmission electron microscopy analyses. The prepared mesoporous film possessed good optical amorphous antireflective property with ordered and vertically oriented pores.
机译:电化学沉积已成功用于制备具有高度有序且垂直定向的孔的中孔二氧化硅薄膜。原硅酸四乙酯用作无机硅源,十六烷基三甲基溴化铵为模板。将负电势施加到工作电极,该工作电极首先浸入溶胶中,然后浸入电极/溶液界面的羟基中。氢氧根离子充当催化剂,促进硅前体的缩聚和自组装,以及形成具有高度有序且相对于面板垂直定向的孔的薄膜。中孔膜的孔排列为六边形,其孔径为2nm至3nm。通过渗透率和透射电子显微镜分析证明了薄膜孔的垂直性。制备的介孔膜具有良好的光学非晶态抗反射性能,具有规则和垂直取向的孔。

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