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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Improved charge carrier transport in ultrathin poly(3-hexylthiophene) films via solution aggregation
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Improved charge carrier transport in ultrathin poly(3-hexylthiophene) films via solution aggregation

机译:通过溶液聚集改善超薄聚(3-己基噻吩)薄膜中的电荷载流子传输

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Field-effect transistors based on poly(3-hexylthiophene) (P3HT) bulk films exhibit maximum charge carrier mobilities of up to 0.1 cm(2) V-1 s(-1). However, reducing the thickness of the polymer film beyond 10 nm results in a significant deterioration of the charge transporting properties. In our work, we demonstrate a strategy towards ultrathin (i. e. thinner than 10 nm) polymer layers with charge carrier mobilities identical to bulk films. The improvement in conduction is related to aggregation of P3HT in solution allowing the formation of fibrils in the ultrathin films. Changing the molar mass of P3HT as well as varying the solvent type, aging time, and spin coating parameters resulted in layers with different thicknesses and fibrillar microstructures. The crystal packing and microstructure of the P3HT films, studied by atomic force microscopy and X-ray diffraction, were correlated with the transistor performance. It has been found that P3HT nanofibrils serve in the ultrathin films as pathways for charge carriers. Films of 8 nm thickness revealing a high density and a sufficient length of nanofibrils, along with pronounced internal crystallinity and long p-stacking coherence length, yield a mobility of 0.1 cm(2) V-1 s(-1). In this way, we demonstrated that controlling the microstructure of the active film in the ultrathin regime does not have to be at the expense of charge carrier mobility.
机译:基于聚(3-己基噻吩)(P3HT)体膜的场效应晶体管表现出的最大电荷载流子迁移率高达0.1 cm(2)V-1 s(-1)。然而,将聚合物膜的厚度减小到超过10nm会导致电荷传输性能的显着降低。在我们的工作中,我们展示了一种超薄(即比10 nm薄的)聚合物层的策略,其电荷载流子迁移率与体膜相同。导电性的改善与溶液中P3HT的聚集有关,从而允许在超薄膜中形成原纤维。改变P3HT的摩尔质量以及改变溶剂类型,老化时间和旋涂参数会导致层具有不同的厚度和原纤维微结构。通过原子力显微镜和X射线衍射研究了P3HT薄膜的晶体堆积和微观结构,它们与晶体管的性能相关。已经发现,P3HT纳米纤维在超薄膜中用作电荷载体的途径。厚度为8 nm的薄膜显示出高密度和足够长的纳米原纤维,以及明显的内部结晶度和长的p-stack相干长度,可产生0.1 cm(2)V-1 s(-1)的迁移率。以这种方式,我们证明了在超薄状态下控制活性膜的微观结构不必以电荷载流子迁移率为代价。

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