首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >High-performance organic field-effect transistors with dielectric and active layers printed sequentially by ultrasonic spraying
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High-performance organic field-effect transistors with dielectric and active layers printed sequentially by ultrasonic spraying

机译:高性能有机场效应晶体管,具有通过超声喷涂顺序印刷的介电层和有源层

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摘要

High-performance organic field-effect transistors (OFETs) are reported with dielectric and active layers sequentially deposited by ultrasonic spray-printing. A cross-linkable insulator and a soluble small molecule semiconductor are developed which are both printable and highly robust Using plastic with pre-patterned indium tin oxide gate contacts as required for display applications, two different layers are sequentially spray-printed: the semiconductor 6,13-bis(trisopropylsilylethynyl)pentacene (TIPS-PEN), and the insulator poiy-4-vinylphenol (PVP). OFETs printed in ambient air with a bottom-gate/ top-contact geometry are shown to achieve on/off ratios of >10~4 and mobilities up to 0.35 cm~2 V~(-1) s~(-1). These rival the characteristics of the best solution-processable small molecule FETs fabricated by other processing methods such as drop casting and ink-jet printing.
机译:据报道,高性能有机场效应晶体管(OFET)具有通过超声喷印顺序沉积的介电层和有源层。开发出可印刷且高度坚固的可交联绝缘体和可溶性小分子半导体。根据显示应用的要求,使用具有预图案化铟锡氧化物栅极触点的塑料,依次喷涂两个不同的层:半导体6, 13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS-PEN)和绝缘子聚-4-乙烯基苯酚(PVP)。结果表明,在具有底栅/顶接触几何形状的环境空气中印刷的OFET可以实现> 10〜4的开/关比,并且迁移率高达0.35 cm〜2 V〜(-1)s〜(-1)。这些特性可与通过其他工艺方法(如滴铸法和喷墨印刷法)制造的最佳溶液可加工小分子FET的特性相媲美。

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