...
首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Different charge-storage mechanisms in disulfide vanadium and vanadium carbide monolayer
【24h】

Different charge-storage mechanisms in disulfide vanadium and vanadium carbide monolayer

机译:二硫化钒和碳化钒单层中不同的电荷存储机理

获取原文
获取原文并翻译 | 示例

摘要

Two-dimensional (2D) transition-metal (TM) compound nanomaterials, due to their high-surface-area and large potential charge capability of TM atoms, have been widely investigated as electrochemical capacitors. However, the understanding of charge-storage mechanisms of 2D transition-metal compounds as electrode materials is still limited. In this study, using density functional theory computations, we systematically investigate the electrochemical properties of monolayer VS2 and V2C. Their electronic structures show a significant electron storage capability of around 0.25 V, referenced to the standard hydrogen electrode, and indicate redox pseudocapacitance characteristics as cathodes. The different charge densities visually confirm that excess electrons tend to localize in the vanadium atoms nearby contact-adsorbed Li ions, corresponding to the redox of vanadium atoms. In contrast, only the electric double layer acts as a charge-storage mechanism in the V2C monolayer. However, the O saturation would induce redox pseudocapacitance in the V2C monolayer. Furthermore, the calculated metallic behavior and low Li ion diffusion barriers substantiate that V2C and VS2 monolayers would manifest low resistance in the charging process. Our findings provide insights for the different charge-storage mechanism of VS2 and V2C monolayers.
机译:二维(2D)过渡金属(TM)化合物纳米材料由于其高表面积和TM原子的大潜在充电能力,已被广泛用作电化学电容器。然而,对于2D过渡金属化合物作为电极材料的电荷存储机理的理解仍然受到限制。在这项研究中,我们使用密度泛函理论计算,系统地研究了单层VS2和V2C的电化学性能。相对于标准氢电极,它们的电子结构显示出约0.25 V的显着电子存储能力,并指示出作为阴极的氧化还原伪电容特性。不同的电荷密度从视觉上证实了过量的电子倾向于位于接触吸附的锂离子附近的钒原子中,这对应于钒原子的氧化还原。相反,在V2C单层中只有双电层充当电荷存储机制。但是,O饱和会在V2C单层中引起氧化还原伪电容。此外,计算出的金属性能和低的Li离子扩散势垒证实了V2C和VS2单层在充电过程中会表现出低电阻。我们的发现为VS2和V2C单层的不同电荷存储机制提供了见解。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号