首页> 外国专利> VANADIUM SILICIDE CARBIDE NITRIDE FILM, MEMBER COVERING VANADIUM SILICIDE CARBIDE NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME

VANADIUM SILICIDE CARBIDE NITRIDE FILM, MEMBER COVERING VANADIUM SILICIDE CARBIDE NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME

机译:碳化硅氮化钒膜,成员覆盖的碳化硅氮化钒膜及其制造方法

摘要

To provide a hard film including vanadium, carbon and nitrogen and capable of improving hardness.SOLUTION: Formed is a vanadium silicide carbide nitride film 4 satisfying a relationship of 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 when defining vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) as a and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) as b in the film including vanadium, silicon, carbon and nitrogen and having 90 at% or more of the total amount of vanadium element concentration, silicon element concentration, carbon element concentration and nitrogen element concentration in the film. Preferably, the carbon element concentration is 10 at% or more and the nitrogen element concentration is 10 at% or more.SELECTED DRAWING: Figure 2
机译:为了提供包含钒,碳和氮并且能够提高硬度的硬质膜。解决方案:形成钒硅碳化硅氮化物膜4,当定义钒时,其满足0.30≤a/b≤1.3和0.30≤a+b≤0.70的关系膜中的元素浓度/(钒元素浓度+硅元素浓度+碳元素浓度+氮元素浓度)为a,硅元素浓度/(钒元素浓度+硅元素浓度+碳元素浓度+氮元素浓度)为a钒,硅,碳和氮,并具有膜中钒元素浓度,硅元素浓度,碳元素浓度和氮元素浓度总量的90 at%或更高。优选地,碳元素浓度为10at%或更高,而氮元素浓度为10at%或更高。图2

著录项

  • 公开/公告号JP2019035108A

    专利类型

  • 公开/公告日2019-03-07

    原文格式PDF

  • 申请/专利权人 DOWA THERMOTECH KK;

    申请/专利号JP20170156684

  • 申请日2017-08-14

  • 分类号C23C16/36;C23C16/34;C23C16/50;B23B27/14;B23F21;B21D37/01;B21D37/20;

  • 国家 JP

  • 入库时间 2022-08-21 12:20:18

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