首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Investigation on the homogeneity of pulsed electrochemically deposited thermoelectric films with synchrotron μ-XRF, μ-XRD and μ-XANES
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Investigation on the homogeneity of pulsed electrochemically deposited thermoelectric films with synchrotron μ-XRF, μ-XRD and μ-XANES

机译:用同步加速器μ-XRF,μ-XRD和μ-XANES研究脉冲电化学沉积热电薄膜的均匀性

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摘要

Thermoelectric materials are able to generate a voltage and current, when subjected to a gradient of temperature. A cost and time efficient production of thermoelectric units is the goal for future miniaturized thermoelectric generators based on thin films up to 200 urn. A comprehensive analysis of chemical and physical properties is a crucial part of the developments. One of the key parameters for the materials' physical properties is the Seebeck coefficient (S = AU/AT), which is the generated voltage for a given temperature difference. To determine the origin of a variation of S, which is found for thermoelectric materials, such as Bi2Te3 and Sb2Te3 an investigation on their stoichiometric and structural homogeneity is presented. Nondestructiveness and a mesoscopic spatial resolution are the key parameters which allow for repetitive analyses. The samples are electrochemical deposits of 10 μm thickness on Si wafers. Micro-X-ray fluorescence (μ-XRF) and micro-X-ray diffraction analysis (μ-XRD) with 15 μm spot size are performed simultaneously with focused synchrotron X-ray radiation at 30 keV. Additionally micro-X-ray absorption near edge structure (μ-XANES) measurements are performed. No inhomogeneity is detectable for samples prepared under optimized, pulsed potential conditions. Instead an indication of a correlation between the thermopower (5) variations and sample thickness variations is found.
机译:当经受温度梯度时,热电材料能够产生电压和电流。具有成本效益和时间效率的热电单元生产是未来基于200微米薄膜的小型热电发电机的目标。化学和物理性质的综合分析是开发的关键部分。材料物理特性的关键参数之一是塞贝克系数(S = AU / AT),它是在给定温度差下产生的电压。为了确定在热电材料(例如Bi2Te3和Sb2Te3)中发现的S变体的起源,我们对它们的化学计量和结构均匀性进行了研究。无损和介观空间分辨率是允许重复分析的关键参数。样品是在硅晶片上厚度为10μm的电化学沉积物。与30 keV聚焦的同步加速器X射线同时进行具有15μm光斑尺寸的Micro-X射线荧光(μ-XRF)和Micro-X射线衍射分析(μ-XRD)。另外,还进行了近边缘结构的X射线微吸收(μ-XANES)测量。在优化的脉冲电势条件下制备的样品没有检测到不均匀性。而是找到了热功率(5)变化与样品厚度变化之间相关性的指示。

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