首页> 外文会议>Symposium G on surface proceeding: Laser, lamp, plasma of the E-MRS conference >An XPS and XRD study of physical and chemical homogeneity of Pb(Zr, Ti)O{sub}3 thin films obtained by pulsed laser deposition
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An XPS and XRD study of physical and chemical homogeneity of Pb(Zr, Ti)O{sub}3 thin films obtained by pulsed laser deposition

机译:脉冲激光沉积获得的PB(Zr,Ti)O {Sub} 3薄膜的物理和化学均匀性的XPS和XRD研究

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Pb(Zr, Ti)O{sub}3 (PZT) oriented films deposited by laser ablation on Au(111)/Si(111) have been tested by different techniques for their physico-chemical homogeneity. The samples have been divided in different zones, in order to verify the existence of chemical and structural differences between different regions. Few techniques like X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) have been employed for characterization. XRD analyses showed differences regarding the crystallographic content and the degree of orientation between zones subjected to the plasma arriving at different angles of incidence on the sample surface. In the same zones XPS studies have been performed by a VG ESCALAB 210 Spectrometer, using a non-monochromatic AlK{sub}α X-ray source (300 W) in the five channel hemispherical analyzer. Wide scans in the binding energy scale 0-1200 eV, at 50 eV analyzer pass energy, were collected both from the as received surface and after sputter cleaning in order to put into evidence all the constituents of the film. Narrow scans of Ti 2p, Zr 3d, Pb 4f and O 1s were also acquired at 20 eV and 0.1 eV/channel pass energy and 100 ms of dwell time in order to give a better insight into the chemical bonds form and a semiquantitative analyze of the present chemical species. The piezoelectric properties of different zones were also measured.
机译:通过激光烧蚀于Au(111)/ Si(111)沉积的Pb(Zr,Ti)o {亚} 3(PZT)取向薄膜已经通过不同的技术进行了物理化学均匀性测试。样品已经分为不同的区域,以验证不同地区之间的化学和结构差异的存在。已经采用了X射线衍射(XRD)和X射线光电子光谱(XPS)的少量技术用于表征。 XRD分析显示了关于晶体含量的差异和受到在样品表面上不同入射角到达的等离子体之间的区域之间的取向程度。在相同区域中,在五个通道半球分析仪中使用VG Escalab 210光谱仪进行了VG eScalab 210光谱仪进行了研究。X射线源(300W)。在50 eV分析仪通过能量下,在50 eV分析仪通过能量的宽扫描,从AS接收的表面和溅射清洁后收集,以便放入薄膜的所有组分。在20eV和0.1eV /通道通能和100ms的停留时间中也获得了Ti 2P,Zr 3D,Pb 4F和O 1s的窄扫描,以便更好地了解化学键的形式和半定量分析本发明的化学品种。还测量了不同区域的压电性能。

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