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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Engineering the kinetics and interfacial energetics of Ni/Ni-Mo catalyzed amorphous silicon carbide photocathodes in alkaline media
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Engineering the kinetics and interfacial energetics of Ni/Ni-Mo catalyzed amorphous silicon carbide photocathodes in alkaline media

机译:在碱性介质中设计Ni / Ni-Mo催化的非晶碳化硅光电阴极的动力学和界面能

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Photoelectrochemical (PEC) water splitting is a sustainable approach to produce a renewable fuel by harvesting the energy of the Sun to split water to form hydrogen and oxygen. In order to drive the water splitting reaction efficiently, substantial ohmic losses due to poor ionic conductivity of the electrolyte should be avoided, and therefore the reaction should be carried out at an extreme electrolyte pH. Herein we demonstrate the photoelectrochemical activity of an amorphous silicon carbide (a-SiC) photocathode for solar hydrogen evolution using an ultrathin nickel (Ni) film coupled with a nickel molybdenum catalyst (Ni-Mo) in a highly alkaline solution (pH 14). The incorporation of the Ni film coupled with Ni-Mo nanoparticles increases the number of active sites and therefore improves the kinetics of the hydrogen evolution reaction. Additionally, we report the influence of the catalyst configurations on the ohmic and solid liquid junction behavior on semiconducting interfacial layers. The a-SiC photocathode coated with the Ni/Ni-Mo dual-catalyst produces a photocurrent density of -14 mA cm(-2) at 0 V vs. RHE using only cheap and abundant materials. This photocurrent is the highest recorded value from an amorphous-Si-based photocathode, and is achieved with a total film thickness of less than 150 nm.
机译:光电化学(PEC)水分解法是一种可持续的方法,可通过收集太阳能将水分解成氢和氧来生产可再生燃料。为了有效地驱动水分解反应,应避免由于电解质的差的离子电导率而导致的大量欧姆损失,因此该反应应在极端的电解质pH下进行。在本文中,我们展示了使用超薄镍(Ni)膜与镍钼催化剂(Ni-Mo)在高碱性溶液(pH 14)中耦合的非晶碳化硅(a-SiC)光电阴极对太阳能氢析出的光电化学活性。与Ni-Mo纳米颗粒结合的Ni膜的结合增加了活性位点的数量,因此提高了析氢反应的动力学。此外,我们报告了催化剂构型对半导体界面层上的欧姆和固液结行为的影响。仅使用廉价和丰富的材料,涂有Ni / Ni-Mo双催化剂的a-SiC光电阴极在0 V vs. RHE下产生的光电流密度为-14 mA cm(-2)。该光电流是非晶硅基光电阴极的最高记录值,并且总膜厚小于150 nm。

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