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首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Three Dimensional Spherically Evolved Nanostructures of ZnO Comprised of Nanowires and Nanorods for Optoelectronic Devices
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Three Dimensional Spherically Evolved Nanostructures of ZnO Comprised of Nanowires and Nanorods for Optoelectronic Devices

机译:光电器件纳米线和纳米棒组成的ZnO的三维球形演化纳米结构

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Novel spherically evolved nanostructures of ZnO comprised of nanowires and nanorods in large quantity are synthesized from ZnO/Graphite powders in one step at similar to 900 degrees C +/- 50 degrees C and collected over a 4 inch x 1 inch long strip of Si/SiO2 substrate placed at 700 degrees C-500 degrees C temperature gradient zone for 3 hours. The deposited nanostructures look off-white thick layered material sticking hard to the substrate under the above condition. Scanning electron microscopy images show that all sample decorated densely with the nanowires and nanorods populated with the spherically evolved nanostructures. Energy Dispersive X-Ray spectra (EDX) spectra reveal that as-grown material has pure Zn and O composition with no carbon or other impurities in the sample. The XRD spectra of the sample show perfectly matched wurtzite crystal structure with c/a = 1.60 and Raman Spectra also show strong E-2 peak at 437 cm(-1) (Raman-active optical phonon mode) considered a signature of hexagonal phase of ZnO crystal. Photoluminescence (PL) spectra obtained at room temperature from the two ends of the sample (grown at 700 degrees C and 500 degrees C) show sharp near band edge peak at 381 nm in the UV regime and a broad wide peak in the green/blue regime mainly attributed to the intrinsic defects in the ZnO crystal structure. The growth of such novel nanostructures would be of immense interest in future to better understand the formation and evolution of three dimensional morphologies of materials specially of ZnO at the nano and micro scale as well as for useful application in luminescent devices and optoelectronics.
机译:由ZnO /石墨粉在大约900摄氏度+/- 50摄氏度的一步中合成了由大量纳米线和纳米棒组成的新颖的球形ZnO纳米结构,并收集在4英寸x 1英寸长的Si /将SiO2基板在700摄氏度至500摄氏度的温度梯度区域放置3小时。在上述条件下,所沉积的纳米结构看起来为灰白色的厚层材料,其难以粘附到基底上。扫描电子显微镜图像显示,所有样品均被纳米线和纳米棒密集地装饰,纳米线和纳米棒中填充了球形演化的纳米结构。能量色散X射线光谱(EDX)光谱表明,生长后的材料具有纯的Zn和O成分,样品中没有碳或其他杂质。样品的XRD光谱显示c / a = 1.60的纤锌矿晶体结构完全匹配,拉曼光谱还显示在437 cm(-1)处有很强的E-2峰(拉曼活性光学声子模式),被认为是六方相的特征。 ZnO晶体。在室温下从样品的两端(分别在700摄氏度和500摄氏度下生长)获得的光致发光(PL)光谱显示,在紫外区,在381 nm处出现了清晰的近谱带边缘峰,在绿色/蓝色中显示了宽峰这种机制主要归因于ZnO晶体结构中的固有缺陷。为了更好地理解纳米级和微米级尤其是ZnO的材料的三维形态的形成和演化,以及在发光器件和光电学中的有用应用,这种新型纳米结构的增长将在未来引起极大的兴趣。

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