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首页> 外文期刊>Journal of nanoscience and nanotechnology >Ultra Thin CVD Diamond Film Deposition by Electrostatic Self-Assembly Seeding Process with Nano-Diamond Particles
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Ultra Thin CVD Diamond Film Deposition by Electrostatic Self-Assembly Seeding Process with Nano-Diamond Particles

机译:纳米金刚石粒子静电自组装种子沉积法制备超薄CVD金刚石膜

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摘要

Ultra thin and smooth nano crystalline diamond films were fabricated with electrostatic self-assembly seeding of explosively synthesized nano-diamond particles. Hard aggregates of nano-diamond particles were crushed by high revolution attrition milling at 1000 RPM to regulate the particle size. Through this process, cationic nano-diamond particles were coated with anionic PSS (poly sodium 4-styrene sulfonate) electrolytes. Anionic Si(100) substrate was coated with cationic PDDA (poly diallyldimethyl ammonium chloride) solution. Si(100)/PDDA/PSS/ND (nano-diamond) layer-by-layer structure was formed as a seeding layer by the simple dipping and rinsing of positively charged substrate into anionic PSSano-diamond solution. Throughout the seeding process, neither mechanical damage nor chemical attack was observed on the substrate. Every stage of this preparation was carried out at room temperature and pressure. The effect of attrition milling was determined by changing the milling time from 1 hr to 5 hrs. Through the attritional milling and monolayer formation of the nano-diamond, nucleation density was increased up to 3 × 10~11/cm~2. Typical hot filament chemical vapor deposition system was used to coat the diamond film on the ESA (electrostatic self-assembly) seeded Si(100) substrate. Although typical diamond deposition conditions (90 torr/1% CH_4 in H_2/800℃) were maintained, ultra thin (<100 nm) and continuous nano crystalline diamond films were deposited. Regardless of metallic or ceramic substrate, ESND (ESA Seeding of nano-diamond) process is applicable if the substrate has any charge. This simple nano technology based process ensures high thickness uniformity of diamond coating without visible edge effect.
机译:通过爆炸性合成纳米金刚石颗粒的静电自组装种子制备了超薄且光滑的纳米晶金刚石膜。纳米金刚石颗粒的硬聚集体通过以1000 RPM的高转速减磨进行粉碎,以调节粒径。通过此过程,阳离子纳米金刚石颗粒被阴离子PSS(聚4-苯乙烯磺酸钠)电解质覆盖。阴离子Si(100)基板上涂有阳离子PDDA(聚二烯丙基二甲基氯化铵)溶液。通过将带正电的基材简单地浸入并漂洗到阴离子PSS /纳米金刚石溶液中,Si(100)/ PDDA / PSS / ND(纳米金刚石)逐层结构形成为籽晶层。在整个播种过程中,在基材上均未观察到机械损伤或化学侵蚀。该制备的每个阶段均在室温和压力下进行。通过将研磨时间从1小时更改为5小时来确定研磨的效果。通过纳米金刚石的磨碎和单层形成,成核密度增加到3×10〜11 / cm〜2。典型的热丝化学气相沉积系统用于在ESA(静电自组装)种子的Si(100)衬底上涂覆金刚石膜。尽管维持了典型的金刚石沉积条件(在H_2 / 800℃下为90 torr / 1%CH_4),但仍沉积了超薄(<100 nm)和连续的纳米晶金刚石膜。无论金属或陶瓷基材如何,如果基材带电荷,都可以使用ESND(纳米金刚石的ESA种子)工艺。这种基于纳米技术的简单工艺确保了金刚石涂层的高厚度均匀性,而没有可见的边缘效应。

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