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首页> 外文期刊>Journal of nanoscience and nanotechnology >Low-Temperature Growth and Characterization of Single Crystalline ZnO Nanorod Arrays Using a Catalyst-Free Inductively Coupled Plasma-Metal Organic Chemical Vapor Deposition
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Low-Temperature Growth and Characterization of Single Crystalline ZnO Nanorod Arrays Using a Catalyst-Free Inductively Coupled Plasma-Metal Organic Chemical Vapor Deposition

机译:无催化剂感应耦合等离子体金属有机化学气相沉积的单晶ZnO纳米棒阵列的低温生长和表征

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Vertically aligned ZnO nanorod arrays have been synthesized on c-plane sapphires at a low temperature of 400 ℃ using catalyst-free inductively coupled plasma (ICP) metal organic chemical vapor deposition (MOCVD) technique by varying the ICP powers. Diameters of the ZnO nanorods changed from 200 nm to 400 nm as the ICP power increased from 200 to 400 Watt. TEM and XRD investigations indicated that the ZnO nanorod arrays grown at ICP powers above 200 Watt had a homogeneous in-plane alignment and single crystalline nature. PL study at room temperature (RT) and 6 K confirmed that the ZnO nanorod arrays in the present study are of high optical quality as well as good crystalline quality, showing only exciton-related emission peaks without any trace of defect-related deep level emissions in visible range. The blueshift of exciton emission peak in RTPL spectra was also found as rod diameter decreased and it is deduced that this shift in emission energy may be due to the surface resonance effect resulted from the increased surface-to-volume ratio, based on the observation and behavior of the surface exciton (SX) emission in the high-resolution 6 K PL spectra.
机译:通过使用无催化剂感应耦合等离子体(ICP)金属有机化学气相沉积(MOCVD)技术,通过改变ICP功率,在400℃的低温下在c面蓝宝石上合成了垂直排列的ZnO纳米棒阵列。随着ICP功率从200瓦增加到400瓦,ZnO纳米棒的直径从200 nm变为400 nm。 TEM和XRD研究表明,以200瓦以上的ICP功率生长的ZnO纳米棒阵列具有均匀的面内排列和单晶性质。在室温(RT)和6 K下的PL研究证实,本研究中的ZnO纳米棒阵列具有较高的光学质量以及良好的晶体质量,仅显示与激子相关的发射峰,而没有任何与缺陷相关的深能级发射的痕迹在可见范围内。根据观察,还发现,随着棒直径的减小,激子发射峰的蓝移也随棒直径的减小而推导,并且推论出发射能量的这种移动可能归因于表面积与体积比增加所引起的表面共振效应。高分辨率6 K PL光谱中表面激子(SX)发射的行为。

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