Study on the Characteristics of Amorphous Low-k Thin Film for Solar Cells

摘要

The most practical solar cells are silicon based crystal silicon solar cells. Phosphorus oxychloride for n~+ type doping was diffused on a p~+ Si, SiC and poly Si using N_2 carrier gas by low pressure chemical vapor deposition. The series resistances on various p type silicon substrates were researched. An n~+-p~+ junction was fabricated by thermal diffusion of phosphorus oxychloride into a p~+ Si wafer. For the rear metallization, Al was deposited using screen printing and SiOC film was used instead of SiO_2 film as a passivation material for the metal layer. SiOC film was made by the capacitive coupled plasma chemical vapor deposition. When the Fourier transform infrared spectra of SiOC film shows organic properties including a strong peak of the Si-CH_3 bond, the efficiency was increased, because of the reduction of the recombination at the back surface.