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Micromagnetics Simulation for Magnetization Switching of Permalloy Films with Pure Spin Current Injection

机译:纯自旋电流注入坡莫合金薄膜磁化转换的微磁模拟

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Pure spin current injection has recently been developed as an effective method of controlling magnetization in spintronic devices. In order to investigate the dynamics of the magnetization reversal process in magnetic films with pure spin current injection, we performed micromagnetics simulations based on the Landau-Lifshitz equation and taking into account a term representing spin transfer torque caused by the pure spin current. We studied the time evolution of magnetization in permalloy films and estimated the probability of magnetization switching to show how the probability depends on the width of the film and the intensity of the injected spin current. We found that, in narrow films, a transverse domain wall is formed in the film and that this wall moves outside the film when magnetization switching occurs. The switching time becomes shorter as the intensity of the injected spin current is increased. In wide films, on the other hand, magnetization switching does not occur even if the intensity of injected spin current is increased. In such cases, either a magnetic vortex core is formed or the configuration of the moments hardly changes from the initial magnetic state.
机译:纯自旋电流注入最近已被开发为控制自旋电子器件中磁化的有效方法。为了研究纯自旋电流注入的磁性薄膜中磁化反转过程的动力学,我们基于Landau-Lifshitz方程并考虑了代表由纯自旋电流引起的自旋传递转矩的项,进行了微磁模拟。我们研究了坡莫合金膜中磁化的时间演化,并估计了磁化转换的概率,以显示该概率如何取决于膜的宽度和注入的自旋电流的强度。我们发现,在窄膜中,在膜中形成了横向畴壁,并且当发生磁化转换时,该畴壁移到膜的外部。随着注入的自旋电流强度的增加,切换时间变得更短。另一方面,在宽膜中,即使增加了注入的自旋电流的强度,也不会发生磁化切换。在这种情况下,要么形成磁涡流芯,要么力矩的配置几乎不会从初始磁态改变。

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