Magnetoresistive element, magnetic memory, magnetization switching method, and spin current magnetization switching element

摘要

In this magnetoresistive effect element, a first ferromagnetic metal layer whose magnetization direction is fixed, a second ferromagnetic metal layer whose magnetization direction is variable, a first ferromagnetic metal layer, and a second ferromagnetic metal layer. A magnetoresistive effect element having a sandwiched nonmagnetic layer; a spin orbit torque wiring extending in a direction intersecting with the stacking direction of the magnetoresistive effect element and joined to the second ferromagnetic metal layer; And the current flowing in the magnetoresistive effect element and the current flowing in the spin orbit torque wiring are merged or distributed at a portion where the magnetoresistive effect element and the spin orbit torque wiring are joined. .