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Silicon Micromachined Waveguide Quadrature-Hybrid Coupler at Terahertz Frequency Band

机译:太赫兹频段的硅微加工波导正交混合耦合器

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A waveguide quadrature-hybrid coupler operating from 350 to 410 GHz is designed and fabricated using the deep reactive ion etching (DRIE) silicon micromachining technique. The four-port branch-line coupling configuration with five branches is used as the basic structure of the coupler. The size of the coupler is about 6.3 mm x 6.3 mm x 1 mm, which is much smaller than the flange used in the vector network analyzer (VNA). Because it is difficult to measure all the characteristics of a four-port coupler with a small size using the two-port VNA with big-size flanges, four testing topologies with different bended input/output waveguide ports are designed for measurements. The terahertz (THz) wedged-type absorbing material is adopted as the replacement of the conventional waveguide matching load because the size of the conventional waveguide matching load is too large to use. Measured results of the proposed coupler are in good agreement with simulated results, indicating that the average insertion loss is 0.9 dB and the isolation is better than 20 dB. Effects of the DRIE process on the coupler's performance are discussed in detail.
机译:使用深反应离子刻蚀(DRIE)硅微加工技术设计和制造了工作于350至410 GHz的波导正交混合耦合器。具有五个分支的四端口分支线耦合配置用作耦合器的基本结构。耦合器的尺寸约为6.3 mm x 6.3 mm x 1 mm,比矢量网络分析仪(VNA)中使用的法兰小得多。由于使用带有大尺寸法兰的两端口VNA很难测量小尺寸的四端口耦合器的所有特性,因此设计了四种具有不同弯曲输入/输出波导端口的测试拓扑进行测量。太赫兹(THz)楔形吸收材料被用作常规波导匹配负载的替代,因为常规波导匹配负载的尺寸太大而无法使用。提出的耦合器的测量结果与模拟结果吻合良好,表明平均插入损耗为0.9 dB,隔离度优于20 dB。详细讨论了DRIE工艺对耦合器性能的影响。

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