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Photo-electrical properties of silver indium selenide thin films

机译:银硒化铟薄膜的光电性能

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Ternary thin films of the I-III-VI_2 compound semicon-ductors, suitable for solar energy conversion, have attracted considerable interest. The I-III-VI_2 compounds are the ternary analogues of II-VI compounds [1]. They crystallize in the chalcopyrite structure, which is closely related to zinc blend structure. Ternary chalcopyrite compounds have photovoltaic potential for solar cells since their optical band gap lies between 0.8 and 2.0 eV and they can be grown either as n or p-type[2]. AgInSe_2 is a ternary analogue of CdSe, which has been used for a number of electronic devices. AgInSe_2 is a semiconductor with energy gap of 1.20 eV [1].
机译:适用于太阳能转换的I-III-VI_2复合半导体三元薄膜引起了极大的兴趣。 I-III-VI_2化合物是II-VI化合物的三元类似物[1]。它们在黄铜矿结构中结晶,而黄铜矿结构与锌混合结构密切相关。三元黄铜矿化合物的光带隙在0.8到2.0 eV之间,因此它们可以以n型或p型生长[2]。 AgInSe_2是CdSe的三元类似物,已被用于许多电子设备。 AgInSe_2是一种能隙为1.20 eV的半导体[1]。

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