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Doping level of Sr2TmCu3Oz prepared at high oxygen pressure

机译：高氧压力下制备的Sr2TmCu3Oz的掺杂水平

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来源
《Journal of Materials Science Letters》 |2000年第22期|共3页
作者
Ono A.; Tsutsumi M.; Yajima Y.;
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正文语种 eng
中图分类工程材料学;
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1. Doping level of Sr2TmCu3Oz prepared at high oxygen pressure [J] . Ono A., Tsutsumi M., Yajima Y. Journal of Materials Science Letters . 2000,第22期

机译：高氧压力下制备的Sr2TmCu3Oz的掺杂水平
2. Effects of oxygen partial pressure on doping properties of Ga-doped ZnO films prepared by ion-plating with traveling substrate [J] . Yamada T, Ikeda K, Kishimoto S, Surface & Coatings Technology . 2006,第7期

机译：氧分压对行进衬底离子镀Ga掺杂ZnO薄膜掺杂性能的影响
3. Ferroelectric properties of (Pb,La)(Zr,Ti)O-3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures [J] . Takada Yoko, Okamoto Naoki, Saito Takeyasu, Japanese journal of applied physics . 2016,第6S3期

机译：（Pb，La）（Zr，Ti）O-3电容器的Al2掺杂的ZnO顶电极通过在不同氧气压力下脉冲激光沉积制备的铁电性能
4. Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation [C] . Hong-Hsin Huang, Yen-Ming Chen, Ming-Chih Huang International conference on intelligent technologies and engineering systems . 2014

机译：电子束蒸发制备掺锡氧化铟薄膜的生长特性和性能随氧压的变化
5. Cation Doped Titanum Dioxygen Thin Films Prepared by Reactive Sputtering: Synthesis, Characterization, and Applications for Environmental Catalysis. [D] . DeSario, Paul Anthony. 2011

机译：通过反应溅射制备的阳离子掺杂钛双氧薄膜：合成，表征和在环境催化中的应用。
6. S/N Co-Doped Hollow Carbon Particles for Oxygen ReductionElectrocatalysts Prepared by Spontaneous Polymerization at Oil–WaterInterfaces [O] . Hiroya Abe, Kohei Nozaki, Shu Sokabe, 2020

机译：S / N共掺杂中空碳颗粒用于氧还原通过油水自发聚合制备的电催化剂界面
7. Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures [O] . Li-Ping Peng, A-Ling He, Liang Fang, 2015

机译：射频磁控溅射在不同压力下制备的掺铟ZnO薄膜的结构和性能
8. Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurement on Silicon Dioxide Films Prepared Using High Pressure Oxygen [R] . Zeto, R. J., Irene, E. A., Dong, D. W. 1979

机译：使用高压氧制备的二氧化硅薄膜的残余应力，化学蚀刻速率，折射率和密度测量

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