Preparation of silicon oxide films by ultraviolet-assisted rf plasma-enhanced chemical vapour deposition

摘要

Plasma-enhanced chemical vapour deposition (PECVD) is a suitable technique for preparing various kinds of films by initiating chemical reactions in a gas with an electric discharge [1,2]. PECVD using low-temperature plasmas has found important applications in the microelectronic, optical, solar cell, mechanical and chemical industries.