Method for depositing high quality silicon dioxide by plasma-enhanced chemical vapour deposition (PECVD)

摘要

A method for depositing high quality silicon dioxide (26) in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in the tool by using a high RF power density thereby depositing high quality silicon dioxide (26) at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm² and the deposition rate is from 60 - 150 nm (600-1500 angstroms) per minute for depositing high quality SiO₂ films.