Transmission electron microscopy of Cd3As2 and eutectoid Cd3As2-As crystals

摘要

Cadmium arsenide, Cd3As2, is a narrow band-gap semiconductor with forbidden energy gap of 0.14 eV The electron density in as-grown n-type crystals is as high as 2 X 1024 m-3 [1] and electron mobilities have been reported from 0.3 to 2.0 m2 V-1 s-1 at 300 K, while approaching 28m2V-1s-1 at 4.2 K [2,3] making them suitable for photo detectors, thermal detectors, ultrasonic multipliers, and Hall generators [4, 5]. Hence, crystal and band structures remain of interest [6].