Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce are discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the are discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm(-3). This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 x 10(-4) Omega cm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+. (C) 1998 Kluwer Academic Publishers. [References: 12]
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机译：通过离子镀在电子束维持下沉积氮化铈膜，在氮气氛中放电。晶体结构受到放电电流和衬底温度的强烈影响。 CeN薄膜的晶格间距为0.5020 nm，密度为7.82 g cm（-3）。该膜在20kOe的磁场中在10K下显示顺磁性。 CeN薄膜的努氏硬度超过1600。电阻率为4.6 x 10（-4）Ω·cm，具有p型导电性。暴露在空气中后，CeN薄膜的载流子浓度增加，这表明CeN中Ce的化合价可能为4+。 （C）1998 Kluwer学术出版社。 [参考：12]
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