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首页> 外文期刊>Journal of Materials Science >COPPER THIN FILMS PREPARED BY CHEMICAL VAPOUR DEPOSITION FROM COPPER (II) ACETYLACETONATE
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COPPER THIN FILMS PREPARED BY CHEMICAL VAPOUR DEPOSITION FROM COPPER (II) ACETYLACETONATE

机译:乙酰丙酮铜(II)的化学气相沉积法制备铜薄膜

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摘要

Copper thin films were prepared by a low-temperature atmospheric pressure chemical vapour deposition method. The raw material was copper (ii) acetylacetonate. At a reaction temperature above 220 degrees C, polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity of the film was close to that for bulk copper. [References: 9]
机译:通过低温大气压化学气相沉积法制备铜薄膜。原料是乙酰丙酮铜(ii)。在高于220℃的反应温度下,可以通过原料的氢还原获得多晶铜膜。薄膜的电阻率接近于块状铜的电阻率。 [参考:9]

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