Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass

摘要

The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K similar to 973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K similar to 873 K and decreased with increasing annealing temperature in the range of 873 K similar to 973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zn-i) level (2.91 eV) to the valence band. (c) 2006 Springer Science + Business Media, Inc.