An Enhancement of the Metal Induced Lateral Craystallization Rate by Metal Heat Absorption Layer in Rapid Thermal Annealing Process

摘要

We proposed a rapid thermal annealing processwith Mo heat absorption layer for the purpose of p anenhancement of Metal-Induced Lateral Crystallization(MILC)rate of amorphous silicon (a-Si) thin films on glass substrates.MILC rate was enhanced by using Mo absorption layer withrelatively low lamp power than without Mo layer. With Molayer, amorphous silicon was laterally crystallized about 20#mu#m only 1 minute at 620 deg C. This is because Mo filmcan absorb the light more effectively than a-Si thin film and canbe higher temperature about 290 deg C than that of a-Si thinfilm. Enhancement of MILC rate by Mo layer was found to bemore effective as thickness of Mo increase, because the thickerMo layer can absorb the more light. MILC rate, however,decreased when insulating layer(SiO_2) between Mo and a-Si layer was inserted.