Effect of Mcrostructural Evolution on Electrical Properties of the Copper Electrodeposits for ULSI

摘要

Copper electrodeposits annealed at 80 °C were investigated by electrical resistance measurement, X-ray diffraction and electron backscattered diffraction analyses. The decrease of electrical resistivity had a linear relationship with the re-crystallized area. Interestingly, the texture coefficient of (200) orientation increased as the re-crystallization occurred. Such appearance of (200) texture during annealing seemed to be related to the residual strain in the copper electrodeposits. It is possible to evaluate the progress of grain growth by measuring the electrical resistivity or texture coefficient in copper electrodeposits.