首页> 外文会议>Electrochemical Society Meeting and Symposium on Electrochemical Process in ULSI and MEMS >CROSS-SECTIONAL CRYSTALLOGRAPHIC ANALYSIS OF COPPER ELECTRODEPOSITS FOR ULSI METALLIZATION BY EBSD
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CROSS-SECTIONAL CRYSTALLOGRAPHIC ANALYSIS OF COPPER ELECTRODEPOSITS FOR ULSI METALLIZATION BY EBSD

机译:EBSD的Ulsi金属化铜电吞的横截面晶体分析

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For cross-sectional EBSD(electron backscatter diffraction) analysis, FIB(focused ion beam) milling and coating of conducting materials(carbon or gold) are developed to smooth the rough cutting surface and decrease the charging effect caused by IMD(inter-metallic dielectric) deposits. The copper electrodeposits in trench plug are figured as a single crystal having a few of twinnings. Interestingly, the crystallographic orientation of the overplating region is also founded to be same as that of trench plug. Additionally this experiment shows that the texture of overpiating region also as the {lll}<110> texture, as same as the texture in trench plug. Namely the recrystallization, which has initiated at the specific point in trench plug, can be propagated into the overplating region. Converse^, the movement of grain growth in a trench plug during self-annealing can be inferred by measuring that in the overplating region. Therefore, the in-situ planar EBSD analysis for a self-annealed specimen shows that the grain growth is initiated at the pattern area and the grain usually grows isotropically.
机译:对于横截面EBSD(电子反向散射衍射)分析,开发了FIB(聚焦离子束)铣削和导电材料(碳或金)的涂层以平滑粗切面并降低IMD引起的充电效果(金属间电介质)存款。沟槽插头中的铜电吞充为具有若干孪晶的单晶。有趣的是,超塑区的晶体取向也成立为与沟槽塞的结晶取向相同。此外,该实验表明,过处区域的纹理也是{LLL} <110>纹理,与沟槽插头中的纹理相同。即已经在沟槽塞中的特定点发起的重结晶可以传播到过膜区域。逆转^,通过测量超块区域可以推断出在自退火过程中沟槽塞中的颗粒生长的运动。因此,自退火标本的原位平面EBSD分析表明,在图案区域开始晶粒生长,并且晶粒通常在各向同性地增长。

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