首页> 外文期刊>Journal of Korean Institute of Metal and Materials >Analysis of Residual Stress Effect on Out-of-Plane Deformation of Chemical-Vapor-Deposited Free-Standing Diamond Films
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Analysis of Residual Stress Effect on Out-of-Plane Deformation of Chemical-Vapor-Deposited Free-Standing Diamond Films

机译:残余应力对化学气相沉积自由站立金刚石膜平面变形的影响分析

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摘要

A theoretical model for the influence of residual stress on the out-of-plane deflection in a free-standing thick diamond films (the bowing phenomenon) is presented. The variation in residual stress with film thickness is believed to be a cause of the bowing. In this study, the stress variation is assumed to be produced by a gradual increase of substrate deformation resulting from the layer-by-layer deposition of the film. The model was developed using infinitesimal plate-bending theory, considering the two deformation modes of contraction or expansion and bending. To verify the suggested model, diamond films were fabricated on Si, Mo and W substrates of varying thicknesses using microwave plasma assisted chemical vapor deposition. The model's predictions on bowing, based on intrinsic stress value measured by the curvature method, were in good agreement with the bowing curvature of the as-released films measured by a profilometer. This confirms that the bowing of thick films depends on the intrinsic stress variation of the film associated with gradual increase in substrate deformation. Finally, a method of eliminating bowing by depositing multi-layers with different stresses was discussed.
机译:提出了一种理论模型,用于研究残余应力对独立式厚金刚石膜(弯曲现象)的面外偏转的影响。残余应力随膜厚的变化被认为是弯曲的原因。在这项研究中,假定应力变化是由于薄膜逐层沉积而导致的基板变形逐渐增加而产生的。考虑到收缩或膨胀和弯曲的两种变形模式,该模型是使用极小板弯曲理论开发的。为了验证建议的模型,使用微波等离子体辅助化学气相沉积法在不同厚度的Si,Mo和W衬底上制作了金刚石膜。该模型基于通过曲率法测量的固有应力值对弯曲的预测与通过轮廓仪测量的释放薄膜的弯曲曲率非常吻合。这证实了厚膜的弯曲度取决于膜的固有应力变化,该应力变化与基材变形逐渐增加有关。最后,讨论了一种通过沉积具有不同应力的多层来消除弯曲的方法。

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