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Single Crystallization Mechanism in TLP Bonded Interlayer of Single Crystal Superalloy

机译:TLP键合单晶高温合金夹层中的单晶机理

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The crystallographic orientation analysis over the bonded region in transient liquid phase (TLP) bonded joints of Ni-base single crystal superalloy, CMSX-2 was investigated using MBF-80 insert metal. TLP bonding of CMSX-2 was carried out at 1173 approx 1573 K for 0 approx 19.6 ks in vacuum. The (001) orientation of each test specimen was always aligned perpendicular to the joint interface. The (200)-pole figure and the stereographic triangles for three directions using the electron back scattering pattern (EBSP) method indicated that each analyzed point was projected at the almost same location for any directions. For as-bonded and post-bond heat treated specimens, all analyzed points possessed the almost same orientation across the joint interface and misorientation was negligibly small. HRTEM observation revealed that the atoms were arranged continuously across the bonded interface and quite coherent at the bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during isothermal solidification and single crystallization could be achieved.
机译:使用MBF-80插入金属研究了镍基单晶高温合金CMSX-2的瞬态液相(TLP)键合接头中键合区域的晶体取向分析。 CMSX-2的TLP粘结在1173约1573 K的真空中进行0约19.6 ks。每个试样的(001)方向始终垂直于接头界面对齐。使用电子反向散射图谱(EBSP)方法的(200)极图和三个方向的立体三角形表明,每个方向上的每个分析点都投影在几乎相同的位置。对于粘结后和粘结后热处理的试样,所有分析点在整个关节界面上都具有几乎相同的取向,并且取向差很小,可以忽略不计。 HRTEM观察表明,原子在键合界面上连续排列,并且在键合界面上非常相干。证实了在等温凝固期间从贱金属基底发生了固相的外延生长,并且可以实现单晶化。

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