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De novo KCNH1 mutations in four patients with syndromic developmental delay, hypotonia and seizures

机译:从头开始的KCNH1突变在四名患有发育迟缓,肌张力低下和癫痫发作的患者中

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摘要

The voltage-gated Kv10.1 potassium channel, also known as ether-a-go-go-related gene 1, encoded by KCNH1 (potassium voltage-gated channel, subfamily H (eag related), member 1) is predominantly expressed in the central nervous system. Recently, de novo missense KCNH1 mutations have been identified in six patients with Zimmermann-Laband syndrome and in four patients with Temple-Baraitser syndrome. These syndromes were historically considered distinct. Here we report three de novo missense KCNH1 mutations in four patients with syndromic developmental delay and epilepsy. Two novel KCNH1 mutations (p.R357Q and p.R357P), found in three patients, were located at the evolutionally highly conserved arginine in the channel voltage-sensor domain (S4). Another mutation (p.G496E) was found in the channel pore domain (S6) helix, which acts as a hinge in activation gating and mainly conducts non-inactivating outward potassium current. A previously reported p.G496R mutation was shown to produce no voltage-dependent outward current in CHO cells, suggesting that p.G496E may also disrupt the proper function of the Kv channel pore. Our report confirms that KCNH1 mutations are associated with syndromic neurodevelopmental disorder, and also support the functional importance of the S4 domain.
机译:电压门控的Kv10.1钾通道,也称为与醚相关的基因1,主要由KCNH1(钾电压门控的通道,亚家族H(与eag相关),成员1)编码,主要在中枢神经系统。最近,在6名Zimmermann-Laband综合征患者和4例Temple-Baraitser综合征患者中发现了从头错义KCNH1突变。这些综合症在历史上被认为与众不同。在这里,我们报告了四名患有发展性综合征和癫痫的患者的三个从头错义KCNH1突变。在三名患者中发现的两个新的KCNH1突变(p.R357Q和p.R357P)位于通道电压传感器结构域(S4)中进化高度保守的精氨酸中。在通道孔结构域(S6)螺旋中发现了另一个突变(p.G496E),它充当激活门控中的铰链,主要传导非灭活的向外钾电流。先前报道的p.G496R突变显示在CHO细胞中不产生电压依赖性向外电流,这表明p.G496E也可能破坏Kv通道孔的正常功能。我们的报告证实,KCNH1突变与综合征性神经发育障碍有关,也支持S4结构域的功能重要性。

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