Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films

摘要

This paper discusses the crystallization of thin silicon films using rapid joule heating which is induced by electrical current flowing in 100-nm-thick chromium strips adjacently formed via SiO_2 intermediate layers. Application of 3-|.is-pulsed voltage at 120 V to the chromium strips caused a high joule heating intensity of about 1 MW/cm~2. The electrical conductivity increased 2050 S/cm for 1.3*10~(20)-cm~(-3)-phosphorus doped silicon films because of activation of phosphorus. Oxygen plasma treatment at 250 ℃ and 100 W for 5 min. reduced the density of the defect states and resulted in 1 S/cm for 2.6*10~(17)-cm~(-3)-phosphorus doped silicon films. P-channel thin film transistors were fabricated in the polycrystalline films. A mobility of 204 cm~2/Vs was achieved.