Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment

摘要

This paper focuses on the wet etching of the silicon oxide in the presence of DUV photoresist in the dual gate oxide technology. When BOE was used, residues were found on the surfaces of the photoresist and the silicon oxide, regardless of the type of wet cleaning equipment. When DHF was used, residues were only observed on single wafer cleaning equipment.