首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl) (ethylcyclopentadienyl)ruthenium and Oxygen
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Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl) (ethylcyclopentadienyl)ruthenium and Oxygen

机译:(2,4-脱甲基戊二烯基)(乙基环戊二烯基)钌和氧的两步MOCVD工艺改善Ru薄膜的表面形貌

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Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300℃ using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure, The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process.
机译:使用(2,4-脱甲基戊二烯基)(乙基环戊二烯基)钌[Ru(DMPD)(EtCp)]和氧气,在300℃的TiN和TEOS氧化物衬底上通过金属有机化学气相沉积(MOCVD)生长Ru薄膜。代替常规的单步工艺,我们研究了两步CVD工艺,以提高初始成核速率并减少成膜的孵育时间。该工艺包括:使用高氧气流量和低工艺压力的播种步骤,以及低O2流量和高压的膜生长步骤。与之相比,通过两步工艺沉积的Ru膜具有光滑的表面形貌。单步过程。

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