首页> 外文OA文献 >Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl)(ethylcyclopentadienyl)ruthenium and Oxygen

【2h】

Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl)(ethylcyclopentadienyl)ruthenium and Oxygen

机译：用（2,4-去甲基戊二烯基）（乙基环戊二烯基）钌和氧气两步mOCVD工艺改善Ru薄膜的表面形貌

页面导航

著录项
相似文献
相关主题

著录项

作者
Beom Seok Kim; Cheol Seong Hwang; Hyeong Joon Kima;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl) (ethylcyclopentadienyl)ruthenium and Oxygen [J] . Beom Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：（2,4-脱甲基戊二烯基）（乙基环戊二烯基）钌和氧的两步MOCVD工艺改善Ru薄膜的表面形貌
2. Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-DimethyIpentadienyl)(ethylcyclopentadienyl)ruthenium [J] . Kazuhisa Kawano, Atsushi Nagai, Hiroaki Kosuge Electrochemical and solid-state letters . 2006,第7期

机译：使用（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌通过MOCVD在孔衬底上沉积无籽层的保形钌膜
3. Atomic layer deposition of Ru thin films using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the effect of ammonia treatment during the deposition [J] . Kwon Dae Seon, An Cheol Hyun, Kim Sang Hyeon, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2020,第21期

机译：使用（2,4-二甲基氧基苯基）（乙基环戊二烯基）（乙基环戊二烯基）Ru及沉积期间的氨治疗的作用及其磷酸原子层沉积
4. Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl)(ethylcyclopentadienyl)ruthenium and Oxygen [C] . Beom Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim IUMRS International Conference in Asia . 2007

机译：用（2,4-去甲基戊二烯基）（乙基环戊二烯基）钌和氧气用2步MOCVD工艺改善Ru薄膜的表面形态。
5. Microstructure and electrical properties of MOCVD-derived perovskite lead zirconium(x) titanium(1-x) oxygen(3) and lead (scandium tantalum)(1-x) titanium(x) oxygen(3) thin films on lanthanum nickel oxide electrode-buffered silicon [D] . Lin, Chun-hsiung 2000

机译：镧镍氧化物电极上MOCVD衍生的钙钛矿铅锆（x）钛（1-x）氧（3）和铅（scan钽）（1-x）钛（x）氧（3）薄膜的微观结构和电性能缓冲硅
6. Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties [O] . Dr. Maria R Catalano, Giuseppe Cucinotta, Emanuela Schilirò, 2015

机译：金属有机化学气相沉积（MOCVD）异质外延Pr0.7Ca0.3MnO3薄膜的合成：工艺条件对结构/形态和功能特性的影响
7. Low-Pressure MOCVD of Fe3O4 Epitaxial Thin Films, and Their Surface Reaction Process [O] . M. Gomi, T. Toba 1998

机译：Fe3O4外延薄膜的低压MOCVD及其表面反应过程
8. Effect of carrier gas on the surface of morphology and mosaic dispersion for GaN films by low-pressure MOCVD [R] . Kistenmacher, T. J. , Wickerden, D. K. , Hawley, M. E. , 1995

机译：低压mOCVD法研究载气对GaN薄膜形貌和镶嵌分散的影响

Improvement of Surface Morphologies of Ru Thin Films by 2-step MOCVD Process Using (2,4-demethylpentadienyl)(ethylcyclopentadienyl)ruthenium and Oxygen

著录项

相似文献

相关主题

期刊订阅