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Simultaneous removal of particles from front and back sides by a single wafer backside megasonic system

机译:单个晶圆背面超音速系统同时从正面和背面去除颗粒

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摘要

In IC manufacturing, particle removal from a wafer's back side (BS) has become as important as that from the front side (FS). For example, during lithography, BS particles can cause a variation on the topside surface topography. This may result in a focus-spot failure due to the reduced process window for depth of focus (DOF) as shown in Fig. 1. This problem increases as the feature size decreases. BS particles may cause other problems in wet benches, where BS particles can be transferred to the adjacent front side of wafers. Fig. 2 shows these FS particles, which usually appear as flow or streak patterns on the wafer [1].
机译:在集成电路制造中,从晶圆背面(BS)去除颗粒与从正面(FS)去除颗粒一样重要。例如,在光刻过程中,BS颗粒会导致顶表面形貌发生变化。如图1所示,这可能是由于焦点深度(DOF)的处理窗口减少而导致的焦点故障。此问题随着特征尺寸的减小而增加。 BS颗粒可能在潮湿的工作台中引起其他问题,在这些工作台中,BS颗粒可以转移到晶片的相邻正面。图2显示了这些FS颗粒,通常在晶片[1]上以流动或条纹图案出现。

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