Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors

摘要

Superdiffusion in a non-equilibrium condition using only electron irradiation is modeled and animated using computer graphics as a means of visualizing the complete superdiffusion mechanism. Three main processes of diffusion are modeled; interstitial diffusion of displaced impurities from an overlying impurity layer toward the interface with the substrate, surface diffusion of impurities at the interface, and volume diffusion into the substrate. The high sticking probability of impurities at the wafer surface, as indicated by the experimental results, is modeled and observed in the animation to behave as expected under irradiation. The algorithm animation generates a continuous display of superdiffusion that is qualitatively consistent with experimental observation, facilitating the understanding of superdiffusion processes.