Diodes Fabricated by Electron Beam Doping (Superdiffusion) Technique in Semiconductors at Room Temperature

摘要

Diodes were fabricated by electron beam doping (superdiffusion) for a non-equilibrium condition by electron irradiation. Tbe entire electron beam doping process is composed mainly of three kinds of steps, as follows: ①displaced atoms by electron irradiation, ② surface diffusion of atoms, ③ kick-out mechanism of impurity atoms. Impurity doping can be interpreted by the kick-out mechanism, which is a combination of interstitialcy and direct interstitial diffusion.