Magnetoresistance and Thermoelectric Power of Semiconductors at Pressures up to 30 GPa

摘要

The results are observed of magnetoresistance and thermoelectric power measurements of crystalline, amorphous and defect semiconductors in pressure range 0 - 30 GPa. It is shown, that by using of the above techniques and also exploring the model of Peierls distortion of lattice it's possible to investigate the details of electron structure of materials undergoing pressure-induced phase transformations. The examples presented for chalcogens Te, Se and mercury chalcogenides HgX (X - Te, Se, S, O).