首页> 外文期刊>Journal of Experimental and Theoretical Physics >Erratum: Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band [JETP 84, 309–316 (February 1997)]
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Erratum: Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band [JETP 84, 309–316 (February 1997)]

机译:勘误:在具有深杂质带的晶体半导体中实现重掺杂和完全补偿的半导体状态[JETP 84,309–316(1997年2月)]

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摘要

The following corrections were reported by the authors. On page 309 in the right-hand column, in the 10th line from the bottom, the equation should read as follows: Nd+=Ndμ++Ndr+. On the same page and the same column, in the 9th line from the bottom, the equation should read as follows: Na=Naμ-+Naμ-+NA. Also on the same page and the same column, in the 2nd line from the bottom, the equation should read as follows: N=Nd+-(Naμ-+Nar-).
机译:作者报告了以下更正。在页面右下方第309页的第10行中,等式应如下所示:Nd + =Ndμ++ Ndr +。在同一页和同一列的底部第9行中,公式应如下所示:Na =Naμ-+Naμ-+ NA。同样,在同一页和同一列的底部第二行中,方程式应如下所示:N = Nd +-(Naμ-+ Nar-)。

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