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Structure and electrical conductivity of ultrathin Ni-Cu films

机译:超薄镍铜薄膜的结构和导电性

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The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1-10 nm and a Cu concentration of 10-95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5-2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d approximate to 1 nm, the electrical conductivity is thermally activated with an activation energy E-a approximate to 0.086-0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.
机译:研究了厚度为d = 1-10 nm,Cu浓度为10-95 at%的Ni-Cu合金超薄膜的结构,相组成,形貌和导电性。所有膜均显示为fcc Ni-Cu合金。它们具有岛状结构,在沉积后的膜中岛尺寸为1.5-2 nm,在退火至700 K的膜中岛尺寸约为20 nm。膜的电导率取决于其厚度和形态。对于d大约为1 nm的薄膜,电导率以大约为0.086-0.095 eV的激活能E-a热激活。 d> 3 nm的薄膜表现出导电性的金属温度依赖性,且电阻率的温度系数为正。

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