首页> 外文期刊>Journal of Experimental and Theoretical Physics >Anisotropy of the Linear and Quadratic Magnetic Birefringence in Rare-Earth Semiconductors γ-Ln_2S_3 (Ln = Dy~(3+), Pr~(3+), Gd~(3+), La~(3+))
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Anisotropy of the Linear and Quadratic Magnetic Birefringence in Rare-Earth Semiconductors γ-Ln_2S_3 (Ln = Dy~(3+), Pr~(3+), Gd~(3+), La~(3+))

机译:稀土半导体γ-Ln_2S_3(Ln = Dy〜(3 +),Pr〜(3 +),Gd〜(3 +),La〜(3+)的线性和二次磁双折射的各向异性

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The field and angular dependence of the magnetic linear birefringence (MLB) in noncentrosymmetric cubic (symmetry class T_d) rare-earth (RE) semiconductors γ-Ln_2S_3 (Ln = Dy~(3+), Pr~(3+), Gd~(3+), La~(3+)) was studied. The field dependence of the MLB in Dy_2S_3 and Pr_2S_3 is a combination of two contributions, quadratic and linear with respect to the magnetic induction B, both possessing a strong anisotropy. The quadratic birefringence related to the Cotton-Mouton effect manifestations at a wavelength of λ = 633 nm is characterized in Dy_2S_3 by the value of β = 1.5 deg/(cm T~2) and the anisotropy parameter a = -0.7 and in Pr_2S_3, by β = 0.2 deg/(cm T~2) and a = 2. The non-reciprocal MLB caused by the magnetic-field-induced spatial dispersion reaches γ = 0.55 and 0.71 deg/(cm T) in Dy_2S_3 and Pr_2S_3, respectively. The relationship between parameters A and g of the γ_(ijkl) tensor describing contributions of the B_ik_j type to the dielectric tensor ε_(ij)(ω, k, B) is A = 2g in Dy_2S_3 (as well as in boracite crystals containing 3d ions), which is characteristic of the second-order magnetoelectric permittivity manifestations in the optical frequency range. In Pr_2S_3, the relationship A = 3.3g is evidence of manifestations of the additional quadrupole mechanism. A comparison of the Cotton-Mouton and Faraday effects in Ln_2S_3 and in magnetic semiconductors Cd_(1-x)Mn_xTe shows a principal difference between these systems and indicates that both phenomena in Ln_2S_3 are determined by the optical transitions in RE ions rather than by the interband or exciton transitions. This is also confirmed by the comparison of the Cotton-Mouton effect manifestations in Ln_2S_3, in dielectric Dy_3Ga_5O_(12) and Dy_3Al_5O_(12) single crystal cubic garnets, and in Dy_2O_3. An analysis of the non-reciprocal MLB mechanisms related to manifestations of the local interconfiguration optical transitions 4f~N → 4f~(N-1)5d in RE ions showed that this phenomenon, in contrast to the Cotton-Mouton and Faraday effects is caused by the presence of odd components of the crystal field acting upon the RE ion in Ln_2S_3. In Gd_2S_3, as well as in diamagnetic Ln_2S_3, neither the Cotton-Mouton effect nor the non-reciprocal MLB are manifested at T = 294 K, which is explained by different microscopic mechanisms of the magnetooptical phenomena for ions in the S-state and diamagnetic ions, on the one hand, and RE ions with nonzero orbital moment, on the other hand.
机译:非中心对称立方(T_d类对称)稀土(RE)半导体γ-Ln_2S_3(Ln = Dy〜(3 +),Pr〜(3 +),Gd〜的磁性线性双折射(MLB)的场和角依赖性研究了(3 +),La〜(3+))。 Dy_2S_3和Pr_2S_3中MLB的场依赖性是相对于磁感应B的二次和线性两个贡献的组合,两者都具有很强的各向异性。在Dy = 2S_3中,与β= 1.5度/(cm T〜2)和各向异性参数a = -0.7有关,在Pr = 2S_3中,与λ= 633 nm波长处的Cotton-Mouton效应表现有关的二次双折射, β= 0.2 deg /(cm T〜2)和a =2。由磁场引起的空间色散引起的不可逆MLB在Dy_2S_3和Pr_2S_3中分别达到γ= 0.55和0.71 deg /(cm T)。 。表示B_ik_j类型对介电张量ε_(ij)(ω,k,B)的贡献的γ_(ijkl)张量的参数A和g之间的关系在Dy_2S_3(以及含3d的硼铁矿晶体)中为A = 2g离子),这是光频率范围内二阶磁电介电常数表现的特征。在Pr_2S_3中,关系A = 3.3g证明了附加的四极机制。对Ln_2S_3和磁性半导体Cd_(1-x)Mn_xTe中的Cotton-Mouton和法拉第效应的比较显示了这些系统之间的主要差异,表明Ln_2S_3中的两种现象均由RE离子的光学跃迁决定,而不是由RE离子决定。带间或激子跃迁。通过比较Ln_2S_3,电介质Dy_3Ga_5O_(12)和Dy_3Al_5O_(12)单晶立方石榴石和Dy_2O_3中的Cotton-Mouton效应表现也可以证实这一点。分析与RE离子中局部互构光学跃迁4f〜N→4f〜(N-1)5d的表现相关的非互逆MLB机制,表明与棉花木顿和法拉第效应相反,此现象是引起的通过作用在Ln_2S_3中的RE离子上的晶体场的奇数成分的存在。在Gd_2S_3以及抗磁性Ln_2S_3中,棉-木顿效应和不可逆MLB在T = 294 K时都没有表现出来,这可以通过S状态和抗磁性离子的磁光现象的不同微观机理来解释。离子,一方面是轨道矩非零的稀土离子。

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