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Giant Electric Conductivity at the CuO-Cu Interface: HTSC-Like Temperature Variations

机译:CuO-Cu界面处的巨大电导率:类似于HTSC的温度变化

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The temperature dependence of electric conductivity and current-voltage characteristics were studied in CuO single crystals with Cu films deposited onto natural faces by thermal evaporation in vacuum or by electrolysis. After electric (resistive) or thermal annealing of the samples, the conductivity of Cu films in this system significantly increases (by a factor of up to 1.5 * 10~5 and above) as compared to that of the control Cu films on a glass-ceramic substrate. The effect is attributed to an interfacial layer formed between CuO and Cu, the high conductivity mechanism in which is unclear. It is suggested that the giant electric conductivity and its HTSC-like temperature dependence, as well as nonlinear current-voltage characteristics of the samples can be due to the formation of superconducting regions with the critical temperatures significantly higher than 400 K.
机译:研究了CuO单晶的电导率与电流-电压特性的温度依赖性,该CuO单晶中的Cu膜是通过真空热蒸发或电解沉积在自然面上的。在样品进行电(电阻)或热退火之后,与玻璃上的对照Cu膜相比,该系统中Cu膜的电导率显着提高(提高了1.5 * 10〜5或更高)。陶瓷基板。该效果归因于在CuO和Cu之间形成的界面层,其中的高导电性机理尚不清楚。这表明,巨大的电导率及其类似HTSC的温度依赖性以及样品的非线性电流-电压特性可能是由于形成了临界温度明显高于400 K的超导区域。

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