Influence of the splitting of dislocations on the g factor of holes in a one-dimensional dislocation band

摘要

The electric-dipole spin resonance (EDSR) signal on straight dislocations with equilibrium and nonequilibrium splitting is measured in silicon crystals. It is shown that the g factor of holes in the one-dimensional energy bands corresponding to dislocations depends on the magnitude of their splitting. This result is consistent with the known fact that the energies of the D3 and DA dislocation photoluminescence lines depend on the splitting of 60° dislocations.