Thermal Conductivity of InAs/GaSb Type II Superlattice

摘要

The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3ω method. Thermal conductivity is reduced by up to two orders of magnitude relative to the GaSb bulk substrate. The low thermal conductivity of around 1 W/m K to 8 W/m K may serve as an advantage for thermoelectric applications at low temperatures, while presenting a challenge for T2SL interband cascade lasers and high-power photodiodes. We describe a power-law approximation to model nonlinearities in the thermal conductivity, resulting in increased or decreased peak temperature for negative or positive exponents, respectively.