Interfacial Reactions of Si Die Attachment with Zn-Sn and Au-20Sn High Temperature Lead-Free Solders on Cu Substrates

摘要

The interfacial reaction of Si die attachment with a high temperature lead-free solder of Zn-xSn (x velence 20 wt.percent, 30 wt.percent and 40 wt.percent) was investigated, and the currently used high temperature lead-free solder of Au-20Sn was compared. A sound die attachment to a Cu substrate can be achieved with Zn-Sn solder. No intermetallic compound (IMC) phase was observed in the solder layer, and only primary alpha-Zn and Sn-Zn eutectic phases were observed. At the interface with the Si die, with a metallization of Au/Ag/Ni, an AgAuZn_(2), IMC layer was formed along the interface, and the Ni coating layer did not react with the solder. At the interface with the Cu substrate, CuZn_(5) and Cu_(5)Zn_(8) IMC layers were confirmed, and their thicknesses can be controlled by soldering conditions. During multiple reflows, the growth of these IMC layers was observed, but no additional voids or cracks were observed. For more reliable die attachment, a titanium nitride (TiN) coating layer was applied to suppress the formation of Cu-Zn IMCs. The Si die attached joint on the TiN-coated Cu was quite stable during the multiple reflows, and no visible IMC phase was confirmed in the interfacial microstructure.