Improvement of Heteroepitaxial Growth by the Use of Twist-Bonded Compliant Substrate: Role of the Surface Plasticity

摘要

In a first step, we have investigated the structure and the mechanical behavior of twist-bonded GaAs-compliant substrates. For a twist angle lower than 15 deg, the bonded interface was observed to contain a dense network of pure screw dislocations. For a larger twist angle, no dislocations were observed at the bonding interface. The mechanical behavior of these compliant substructures were investigated sing nanoindentation, and the results were compared to those obtained on standard bulk GaAs. It appears that the nature of the interface has a great influence on the mechanical properties of these compliant substrates. In a second step, InGaAs alloys were grown on such compliant structures, and their quality was compared to that of layers grown on standard substrates. A promising improvement was observed on compliant structures.