Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth

摘要

A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integrated devices. Devices include vertical FET's for DRAM storage cells, integrated diode laser/FET's, integrated detector/FET's, and common gate CMOS inverters.