High-Quality crystalline layer Transfer from a silicon-on-Insulator Substrate onto a sapphire substrate using wafer Bonding

摘要

We demonstrate layer transfer of 150 nm of Si from a 200-mm,silicon-on-insulator 9SOI)substrate onto a sapphire substrate usign low-temperature wafer bonding (T=150 DEGc).The crystalline aquality and the thermal stability of hte transferred Si layer were characterized by x-ray diffraction (XRD).A broadening of the (004)Si peak is observed only for anneal temperatuares T_A>= 800 deg C,indication some degradatin of the crystalline qualilty of the transferred Si film above these temperatures.The measured electron Hall mobility in the bonded Si layer is comparable to bulk silicon for T_A <=800 deg C,indicatin excellent material quality.