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Increasing area of useful layer of material transferred to support substrate when making composite substrate for optics by bonding substrates such that inner outline of chamfer of substrate is inscribed within outline of other substrate

机译:当通过粘合基板来制作光学复合基板时,增加转移到支撑基板上的有用材料层的面积,以使基板倒角的内部轮廓内接在其他基板的轮廓内

摘要

Increasing the area of a useful layer of a material, particularly a semiconductor material, transferred onto a support substrate during the fabrication of a composite substrate for applications in the fields of optics, electronics or optoelectronics involves bonding front faces of source and support substrates such that an inner outline of a chamfer of one substrate is inscribed within an outline of a flat central zone of the other substrate. Increasing the area of a useful layer (63) of a material, particularly a semiconductor material, transferred onto a support substrate (7) during the fabrication of a composite substrate for applications in the fields of optics, electronics or optoelectronics involves molecular bonding a front face of a source substrate (6) to a facing front face of a support substrate, where each of the front faces has a flat central zone with a respective outline; and transferring the useful layer coming from the source substrate onto the support substrate. The useful layer extends inside the source substrate from its front face. The dimensions of the outer outline (C 61, C 71) of one of the source and support substrates are greater than the dimensions of the outer outline of the other substrate. The other substrate, i.e. the second substrate, is surrounded by a primary chamfer (64, 74) and presents a secondary chamfer (65, 75) extending between the flat central zone (60, 70) and the primary chamfer. The outer outline of the flat central zone of the first substrate presents dimensions greater than the dimensions of the inner outline of the secondary chamfer of the second substrate. During bonding, the substrates are applied one against the other in a manner such that the inner outline (C 6, C 7) of the secondary chamfer of the second substrate is inscribed within the outline of the flat central zone of the first substrate.
机译:在制造用于光学,电子或光电子学领域的复合衬底期间,增加材料,特别是半导体材料的有用层的面积,该有用的层转移到支撑衬底上,该复合衬底用于光学,电子或光电子学领域,涉及粘合源衬底和支撑衬底的正面,使得一个基板的倒角的内部轮廓内接于另一基板的平坦中心区域的轮廓内。在制造用于光学,电子或光电子学领域的复合衬底期间,增加材料,特别是半导体材料的有用层(63)的面积,该有用层转移到支撑衬底(7)上的过程包括分子键合源基板(6)的表面到支撑基板的相对的正面,其中每个正面具有平坦的中央区域,该中央区域具有各自的轮廓;并将来自源基板的有用层转移到支撑基板上。有用层从源基板的正面在源基板的内部延伸。源基板和支撑基板之一的外部轮廓的尺寸(C 61,C 71)大于另一基板的外部轮廓的尺寸。另一基板,即第二基板,被主倒角(64、74)围绕,并且具有在平坦的中央区域(60、70)和主倒角之间延伸的第二倒角(65、75)。第一基板的平坦中心区域的外部轮廓的尺寸大于第二基板的第二倒角的内部轮廓的尺寸。在键合期间,以使第二基板的第二倒角的内部轮廓(C 6,C 7)内接在第一基板的平坦中央区域的轮廓内的方式将基板彼此抵接。

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