Studies of Liquid-Phase Deposition-Oxide/InP Structure by Liquid-Phase Deposition

摘要

Silicon-dioxide (SiO_2) growth on an indium-phosphide (InP) substrate by use of room-temperature (approx 30 deg C) liquid-phase deposition (LPD) is demonstrated. The produced LPD-SiO_2 is of good quality and reliability because of the sup-pression of interdiffusion by use of relatively low temperatures. Because LPD is difficult without residual OH on the substrate, an InP surface rich in hy-droxyls (In-OH) is created by pretreating the wafer substrate in a (29% NH_4OH:H_2O_2=1:1) solution. The LPD-SiO_2/InP is used to fabricate a metal-oxide semiconductor (MOS) capacitor with a device area of 1.12 X 10~(-4) cm~2, yielding a leakage-current density of 8.1 X 10~(-9) A/cm~2 at 3 MV/cm. A mechanism for the LPD deposition of SiO_2 on InP is also presented.